Gros-Jean, M. : rechercher sur Z-Library

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1

Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors

E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer

Journal:

Microelectronics Reliability

Année:

2005

Langue:

english

Fichier:

PDF, 175 KB

english, 2005

2

Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams

G. Borsoni, N. Béchu, M. Gros-Jean, M.L. Korwin-Pawlowski, R. Laffitte, V. Le Roux, L. Vallier, N. Rochat, C. Wyon

Journal:

Microelectronics Reliability

Année:

2001

Langue:

english

Fichier:

PDF, 149 KB

english, 2001

3

[IEEE 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference - Stresa, Italy (2007.06.11-2007.06.12)] 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing

Lee, Fourmun, Marcus, Steve, Shero, Eric, Wilk, Glen, Swerts, Johan, Maes, Jan Willem, Blomberg, Tom, Delabie, Annelies, Gros-Jean, Mickael, Deloffre, Emilie

Année:

2007

Langue:

english

Fichier:

PDF, 475 KB

english, 2007

4

High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal–organic precursor TBTDET

L. Pinzelli, M. Gros-Jean, Y. Bréchet, F. Volpi, A. Bajolet, J.-C. Giraudin

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 163 KB

english, 2007

5

FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

C. Fenouillet-Beranger, S. Denorme, P. Perreau, C. Buj, O. Faynot, F. Andrieu, L. Tosti, S. Barnola, T. Salvetat, X. Garros, M. Cassé, F. Allain, N. Loubet, L. Pham-Nguyen, E. Deloffre, M. Gros-Jean,

Journal:

Solid-State Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 789 KB

english, 2009

6

Modelization of hafnium silicate chemical vapor deposition using tetrakis-diethyl-amino-hafnium and tetrakis-dimethyl-amino-silane

Mickael Gros-Jean, Philippe Bouvet, Houda Graoui, David Chu, David Larmagnac

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2012

7

Electrical Characterization of Advanced MIM Capacitors With Insulator for High-Density Packaging and RF Applications

Bertaud, T., Bermond, C., Blonkowski, S., Vallee, C., Lacrevaz, T., Farcy, A., Gros-Jean, M., Flechet, B.

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology

Année:

2012

Langue:

english

Fichier:

PDF, 1.56 MB

english, 2012

8

Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

A. Salaün, H. Grampeix, J. Buckley, C. Mannequin, C. Vallée, P. Gonon, S. Jeannot, C. Gaumer, M. Gros-Jean, V. Jousseaume

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 1.81 MB

english, 2012

9

Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology

Diokh, Therese, Le-Roux, Elise, Jeannot, Simon, Cagli, Carlo, Jousseaume, Vincent, Nodin, Jean-François, Gros-Jean, Mickaël, Gaumer, Clement, Mellier, Maxime, Cluzel, Jacques, Carabasse, Catherine, Ca

Journal:

Thin Solid Films

Année:

2013

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2013

10

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

Foissac, R., Blonkowski, S., Kogelschatz, M., Delcroix, P., Gros-Jean, M., Bassani, F.

Journal:

Microelectronics Reliability

Année:

2013

Langue:

english

Fichier:

PDF, 869 KB

english, 2013

11

Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope

N. Gaillard, D. Mariolle, F. Bertin, M. Gros-Jean, M. Proust, A. Bsiesy, A. Bajolet, S. Chhun, M. Djebbouri

Journal:

Microelectronic Engineering

Année:

2006

Langue:

english

Fichier:

PDF, 727 KB

english, 2006

12

Wide band frequency and in situ characterization of high permittivity insulators (high-k) for high-speed integrated passives

T. Lacrevaz, B. Fléchet, A. Farcy, J. Torres, M. Gros-Jean, C. Bermond, O. Cueto, B. Blampey, G. Angénieux, J. Piquet, F. de Crécy

Journal:

Microelectronic Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 239 KB

english, 2005

13

Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

M. Thomas, A. Farcy, N. Gaillard, C. Perrot, M. Gros-Jean, I. Matko, M. Cordeau, W. Saikaly, M. Proust, P. Caubet, E. Deloffre, S. Crémer, S. Bruyère, B. Chenevier, J. Torres

Journal:

Microelectronic Engineering

Année:

2006

Langue:

english

Fichier:

PDF, 642 KB

english, 2006

14

Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives

T. Lacrevaz, B. Fléchet, A. Farcy, J. Torres, M. Gros-Jean, C. Bermond, T.T. Vo, O. Cueto, B. Blampey, G. Angénieux, J. Piquet, F. de Crécy

Journal:

Microelectronic Engineering

Année:

2006

Langue:

english

Fichier:

PDF, 429 KB

english, 2006

15

Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros-Jean, S. Blonkowski

Journal:

Microelectronic Engineering

Année:

2010

Langue:

english

Fichier:

PDF, 813 KB

english, 2010

16

Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32 nm NMOSFETs

S. Baudot, P. Caubet, M. Grégoire, R.A. Bianchi, R. Pantel, S. Zoll, M. Gros-Jean, R. Boujamaa, P. Normandon, C. Leroux, G. Ghibaudo

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 527 KB

english, 2011

17

Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

C. Gaumer, E. Martinez, S. Lhostis, M.-J. Guittet, M. Gros-Jean, J.-P. Barnes, C. Licitra, N. Rochat, N. Barrett, F. Bertin, A. Chabli

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 495 KB

english, 2011

18

Anodization of undoped amorphous silicon by electrical injection of holes

M Gros-Jean, I Solomon, J.-N Chazalviel

Journal:

Solid State Communications

Année:

1999

Langue:

english

Fichier:

PDF, 177 KB

english, 1999

19

Formation and characterization of CdS/methyl-grafted porous silicon junctions

M Gros-Jean, R Herino, J.-N Chazalviel, F Ozanam, D Lincot

Journal:

Materials Science and Engineering: B

Année:

2000

Langue:

english

Fichier:

PDF, 235 KB

english, 2000

20

In situ electric field simulation in metal/insulator/metal capacitors

Gaillard, Nicolas, Pinzelli, Luc, Gros-Jean, Mickael, Bsiesy, Ahmad

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 731 KB

english, 2006

21

[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - Reliable 3D Damascene MIM architecture embedded into Cu interconnect for a Ta2O5 capacitor record density of 17 fF/¿m2

Thomas, M., Farcy, A., Perrot, C., Deloffre, E., Gros-Jean, M., Benoit, D., Richard, C., Caubet, P., Guillaumet, S., Pantel, R., Cordeau, M., Piquet, J., Bermond, C., Flechet, B., Chenevier, B., Torre

Année:

2007

Langue:

english

Fichier:

PDF, 836 KB

english, 2007

22

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Aluminum charge/dipole passivation induced by hydrogen diffusion in high-k metal gate

Ribes, G., Barral, V., Chhun, S., Gros-Jean, M., Caubet, P., Petit, D.

Année:

2014

Langue:

english

Fichier:

PDF, 2.43 MB

english, 2014

23

Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors

Bertaud, T., Blonkowski, S., Bermond, C., Vallee, C., Gonon, P., Gros-Jean, M., Flechet, B.

Journal:

IEEE Electron Device Letters

Année:

2010

Langue:

english

Fichier:

PDF, 352 KB

english, 2010

24

[IEEE Proceedings of the IEEE 2006 International Interconnect Technology Conference - Burlingame, CA (2006.06.5-2006.06.7)] 2006 International Interconnect Technology Conference - Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL

Lacrevaz, T., Flechet, B., Farcy, A., Torres, J., Vo, T.T., Bermond, C., Cueto, O., Defay, E., Gros-Jean, M., Blampey, B., Angenieux, G., Piquet, J., de Crecy, F.

Année:

2006

Langue:

english

Fichier:

PDF, 348 KB

english, 2006

25

[IEEE 2007 IEEE International Interconnect Technology Conferencee - Burlingame, CA, USA (2007.06.4-2007.06.6)] 2007 IEEE International Interconnect Technology Conferencee - Impact of TaN/Ta copper barrier on full PEALD TiN/Ta2O5/TiN 3D damascene MIM capacitor performance

Thomas, M., Farcy, A., Deloffre, E., Gros-Jean, M., Perrot, C., Benoit, D., Richard, C., Caubet, P., Guillaumet, S., Pantel, R., Chenevier, B., Torres, J.

Année:

2007

Langue:

english

Fichier:

PDF, 444 KB

english, 2007

26

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO2-RRAM integrated in a 65nm CMOS technology

Diokh, T., Le-Roux, E., Jeannot, S., Gros-Jean, M., Candelier, P., Nodin, J. F., Jousseaume, V., Perniola, L., Grampeix, H., Cabout, T., Jalaguier, E., Guillermet, M., De Salvo, B.

Année:

2013

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2013

27

Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight–secondary ion mass spectrometry

Py, Matthieu, Barnes, Jean-Paul, Boujamaa, Rachid, Gros-Jean, Michael, Nakajima, Kaoru, Kimura, Kenji, Roukoss, Charbel, Pelissier, Bernard, Gambacorti, Narciso

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2011

Langue:

english

Fichier:

PDF, 925 KB

english, 2011

28

Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks

Essa, Z., Gaumer, C., Pakfar, A., Gros-Jean, M., Juhel, M., Panciera, F., Boulenc, P., Tavernier, C., Cristiano, F.

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 2.03 MB

english, 2012

29

Method to assess the grain crystallographic orientation with a submicronic spatial resolution using Kelvin probe force microscope

Gaillard, Nicolas, Gros-Jean, Mickael, Mariolle, Denis, Bertin, François, Bsiesy, Ahmad

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 584 KB

english, 2006

30

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Voltage pulse stress effect on gate stack TDDB distributions at nanometric scale: Consequence on aging by ESD

Foissac, R., Blonkowski, S., Gros-Jean, M., Kogelschatz, M.

Année:

2014

Langue:

english

Fichier:

PDF, 734 KB

english, 2014

31

Investigation on Oxygen Diffusion in a High-k Metal-Gate Stack for Advanced CMOS Technology by XPS

Kechichian, A., Barboux, P., Gros-Jean, M.

Journal:

ECS Transactions

Année:

2013

Langue:

english

Fichier:

PDF, 805 KB

english, 2013

32

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - PEALD ZrO

Monnier, Denis, Gros-Jean, Mickael, Deloffre, Emilie, Doisneau, Béatrice, Coindeau, Stéphane, Crisci, Alexandre, Roy, Jéro^me, Mi, Yanyu, Detlefs, Blanka, Zegenhagen, Jorg, Wyon, Christophe, Martin

Année:

2009

Langue:

english

Fichier:

PDF, 583 KB

english, 2009

33

Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications

Ferrand, J., Beugin, V., Crisci, A., Coindeau, S., Jeannot, S., Gros-Jean, M., Blanquet, E.

Journal:

ECS Transactions

Année:

2013

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2013

34

Incorporation of Cadmium Sulfide into Nanoporous Silicon by Sequential Chemical Deposition from Solution

Journal:

Journal of The Electrochemical Society

Année:

1998

Langue:

english

Fichier:

PDF, 982 KB

english, 1998

35

Electrochemical and Chemical Deposition of II-VI Semiconductors in Porous Silicon

Herino, R., Gros-Jean, M., Montes, L., Lincot, D.

Journal:

MRS Proceedings

Année:

1996

Langue:

english

Fichier:

PDF, 1019 KB

english, 1996

36

Gaseous Phase Study of the Zr-Organometallic ALD Precursor TEMAZ by Mass Spectrometry

Monnier, D., Nuta, I., Chatillon, C., Gros-Jean, M., Volpi, F., Blanquet, E.

Journal:

Journal of The Electrochemical Society

Année:

2009

Langue:

english

Fichier:

PDF, 366 KB

english, 2009

37

Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Boujamaa, R., Martinez, E., Pierre, F., Renault, O., Detlefs, B., Zegenhagen, J., Baudot, S., Gros-Jean, M., Bertin, F., Dubourdieu, C.

Journal:

Applied Surface Science

Année:

2015

Langue:

english

Fichier:

PDF, 1.96 MB

english, 2015

38

Interface Study of SiO2/ HfO2/SiO2 Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories

Guiraud, Alexandre, Breil, Nicolas, Gros-Jean, Mickaël, Deleruyelle, Damien, Micolau, Gilles, Muller, Christophe, Cherault, Nathalie, Morin, Pierre

Journal:

MRS Proceedings

Année:

2010

Langue:

english

Fichier:

PDF, 359 KB

english, 2010

39

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Flatband Voltage Tuning of HfSiON-Based Gate Stacks: Impact of High Temperature Activation Annealing and LaO

Boujamaa, Rachid, Baudot, Sylvain, Martinez, Eugénie, Renault, Olivier, Detlefs, Blanka, Zegenhagen, Jorg, Loup, Virginie, Martin, François, Gros-Jean, Mickael, Bertin, Francois, Dubourdieu, Catheri

Année:

2011

Langue:

english

Fichier:

PDF, 215 KB

english, 2011

40

Metal Electrodes Work Function Measurement at Deca-Nanometer Scale using Kelvin Probe Force Microscope: a Step Forward to the Comprehension of Deposition Techniques Impact on Devices Electrical Properties

Gaillard, Nicolas, Mariolle, Denis, Bertin, Francois, Gros-Jean, Mickael, Bsiesy, Ahmad

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 585 KB

english, 2006

41

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Plasma Enhanced Atomic Layer Deposition of ZrO

Blanquet, Elisabeth, Monnier, Denis, Nuta, Ioana, Volpi, Fabien, Doisneau, Beatrice, Coindeau, Stephane, Roy, J., Detlefs, Blanka, Mi, Y., Zegenhagen, Jorg, Martinet, C., Wyon, C., Gros-Jean, Mickael

Année:

2011

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2011

42

Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

Caubet, Pierre, Blomberg, Tom, Benaboud, Rym, Wyon, Christophe, Blanquet, Elisabeth, Gonchond, Jean-Pierre, Juhel, Marc, Bouvet, Philippe, Gros-Jean, Mickaël, Michailos, Jean, Richard, Claire, Itepra

Journal:

Journal of The Electrochemical Society

Année:

2008

Langue:

english

Fichier:

PDF, 922 KB

english, 2008

43

Oxide nanodots and ultrathin layers fabricated on silicon using nonfocused multicharged ion beams

G. Borsoni, M. Gros-jean, M. L. Korwin-pawlowski, R. Laffitte, V. Le Roux, L. Vallier

Année:

2000

Langue:

english

Fichier:

PDF, 670 KB

english, 2000

44

[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - Gate stack solutions in gate-first FDSOI technology to meet high performance, low leakage, VT centering and reliability criteria

Weber, O., Josse, E., Garros, X., Rafik, M., Federspiel, X., Diouf, C., Toffoli, A., Zoll, S., Gourhant, O., Joseph, V., Suarez-Segovia, C., Domengie, F., Beugin, V., Saidi, B., Gros-Jean, M., Perreau

Année:

2016

Langue:

english

Fichier:

PDF, 830 KB

english, 2016

45

Investigation of point defects in HfO 2 using positron annihilation spectroscopy: internal electric fields impact

Alemany, M, Chabli, A, Oudot, E, Pierre, F, Desgardin, P, Bertin, F, Gros-Jean, M, Barthe, M F

Journal:

Journal of Physics Conference Series

Année:

2017

Langue:

english

Fichier:

PDF, 786 KB

english, 2017

46

Impact of high temperature annealing on La diffusion and flatband voltage (V fb ) modulation in TiN/LaO x /HfSiON/SiON/Si gate stacks

Boujamaa, R., Baudot, S., Rochat, N., Pantel, R., Martinez, E., Renault, O., Detlefs, B., Zegenhagen, J., Loup, V., Martin, F., Gros-Jean, M., Bertin, F., Dubourdieu, C.

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 2.09 MB

english, 2012

47

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

Oudot, Evan, Gros-Jean, Mickael, Courouble, Kristell, Bertin, Francois, Duru, Romain, Rochat, Névine, Vallée, Christophe

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

2018

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2018